PART |
Description |
Maker |
EM640FU16E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM6110FR32AW-10L EM6110FR8AW-10L EM6110FS32AW-10L |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc Emerging Memory & Logic...
|
EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
EM644FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
K6F4016U4EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4016R6CFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F4016R6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR AMI[AMI SEMICONDUCTOR]
|
HY62SF1640 HY62SF16403A HY62SF16403A-I HY62SF16403 |
256Kx16bit full CMOS SRAM High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96 8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|